NTJD4158CT1G Mosfets_Inventory of electronic components_Electronic equipment_Power management

NTJD4158CT1G


：	NTJD4158CT1G
：	Mosfets
：	onsemi
：	Dual N & P-
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N/P-Ch
Drain-to-Source Voltage [Vdss]:	30V/20V
Drain-Source On Resistance-Max:	1.5Ω/0.26Ω
Rated Power Dissipation:	270\|mW
Qg Gate Charge:	0.9nC/2.2nC
Package Style:	SOT-363 (SC-70-6, SC-88)
Mounting Method:	Surface Mount

PDF(1)

3000

2.0753

6225.9

6000

1.9578

11746.8

12000

1.8647

22376.4

15000

1.7643

26464.5

45000

1.6812

75654

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