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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 9mΩ |
| Rated Power Dissipation: | 4.2W |
| Qg Gate Charge: | 18.2nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 21A |
| Turn-on Delay Time: | 9ns |
| Turn-off Delay Time: | 15ns |
| Rise Time: | 33ns |
| Fall Time: | 4ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.2V |
| Technology: | Si |
| Height - Max: | 0.8mm |
| Length: | 3.15mm |
| Input Capacitance: | 1113pF |
| Package Style: | WDFN-8 |
| Mounting Method: | Surface Mount |
1
4.8754
4.8754
200
4.1572
831.44
750
4.0156
3011.7
2500
3.864
9660
10000
3.7224
37224
