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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 77mΩ |
| Rated Power Dissipation: | 230W |
| Qg Gate Charge: | 32.2nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 32.7A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 43ns |
| Rise Time: | 35ns |
| Fall Time: | 45ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | TrenchMOS |
| Input Capacitance: | 1870pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
17.2579
13806.32
1600
14.0961
22553.76
2400
13.9442
33466.08
3200
13.8023
44167.36
