TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 42mΩ |
Rated Power Dissipation: | 5000mW |
Qg Gate Charge: | 6.3nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 5.1A |
Turn-on Delay Time: | 3ns |
Turn-off Delay Time: | 11ns |
Rise Time: | 12ns |
Fall Time: | 2ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2V |
Technology: | Si |
Height - Max: | 0.95mm |
Length: | 3mm |
Input Capacitance: | 209pF |
Package Style: | SOT-23 (SC-59,TO-236) |
Mounting Method: | Surface Mount |
3000
2.5598
7679.4
6000
2.0825
12495
9000
2.0753
18677.7
15000
2.041
30615