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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 78mΩ |
| Rated Power Dissipation: | 480mW |
| Qg Gate Charge: | 5nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 3.3A |
| Turn-on Delay Time: | 7ns |
| Turn-off Delay Time: | 36ns |
| Rise Time: | 19ns |
| Fall Time: | 17ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Technology: | TrenchMOS |
| Input Capacitance: | 618pF |
| Package Style: | TO-236AB |
| Mounting Method: | Surface Mount |
3000
3.3036
9910.8
6000
2.7017
16210.2
9000
2.6774
24096.6
12000
2.6601
31921.2
15000
2.6429
39643.5
