TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 80V |
Drain-Source On Resistance-Max: | 10mΩ |
Rated Power Dissipation: | 194W |
Qg Gate Charge: | 84.7nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 84A |
Turn-on Delay Time: | 23ns |
Turn-off Delay Time: | 62ns |
Rise Time: | 40ns |
Fall Time: | 36ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 1.7V |
Technology: | TrenchMOS |
Input Capacitance: | 4879pF |
Package Style: | SOT-669 |
Mounting Method: | Surface Mount |
1500
12.3634
18545.1
3000
10.0629
30188.7
4500
9.997
44986.5
6000
9.921
59526