TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 22MΩ |
Rated Power Dissipation: | 147W |
Qg Gate Charge: | 65.6nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 49A |
Turn-on Delay Time: | 15.8ns |
Turn-off Delay Time: | 53.4ns |
Rise Time: | 32.3ns |
Fall Time: | 31.1ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.1V |
Technology: | TrenchMOS |
Height - Max: | 1.1mm |
Length: | 5mm |
Input Capacitance: | 3480pF |
Package Style: | LFPAK-56 |
Mounting Method: | Surface Mount |
1500
8.482
12723
3000
6.9011
20703.3
4500
6.8352
30758.4
6000
6.7593
40555.8