TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 3.3mΩ |
Rated Power Dissipation: | 117W |
Qg Gate Charge: | 49nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 100A |
Turn-on Delay Time: | 21ns |
Turn-off Delay Time: | 38ns |
Rise Time: | 21ns |
Fall Time: | 14ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 3V |
Technology: | TrenchMOS |
Input Capacitance: | 2754pF |
Package Style: | SOT-669 |
Mounting Method: | Surface Mount |
1500
14.238
21357
3000
11.5779
34733.7
4500
11.436
51462
6000
11.3601
68160.6