TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 4mΩ |
Rated Power Dissipation: | 69W |
Qg Gate Charge: | 36.6nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 100A |
Turn-on Delay Time: | 28ns |
Turn-off Delay Time: | 44ns |
Rise Time: | 51ns |
Fall Time: | 18ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 1.7V |
Technology: | TrenchMOS |
Input Capacitance: | 2090pF |
Package Style: | SOT-669 |
Mounting Method: | Surface Mount |
1500
8.6239
12935.85
3000
7.043
21129
4500
6.9771
31396.95
6000
6.9011
41406.6