TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 5mΩ |
Rated Power Dissipation: | 61W |
Qg Gate Charge: | 29nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 91A |
Turn-on Delay Time: | 19ns |
Turn-off Delay Time: | 29ns |
Rise Time: | 35ns |
Fall Time: | 12ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 1.7V |
Technology: | TrenchMOS |
Input Capacitance: | 1760pF |
Package Style: | SOT-669 |
Mounting Method: | Surface Mount |
1500
12.6571
18985.65
3000
10.3568
31070.4
4500
10.2048
45921.6
6000
10.1388
60832.8