TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain-Source On Resistance-Max: | 690mΩ |
Rated Power Dissipation: | 150W |
Qg Gate Charge: | 22nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 12A |
Turn-on Delay Time: | 7ns |
Turn-off Delay Time: | 14ns |
Rise Time: | 17ns |
Fall Time: | 12ns |
Operating Temp Range: | -55°C to +200°C |
Gate Source Threshold: | 3.5V |
Technology: | SiC |
Input Capacitance: | 290pF |
Mounting Method: | Through Hole |
30
147.938
4438.14
90
125.5042
11295.378
120
124.2173
14906.076
300
120.0427
36012.81
450
118.32
53244