TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain-Source On Resistance-Max: | 239mΩ |
Rated Power Dissipation: | 150W |
Qg Gate Charge: | 45nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 20A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 27ns |
Rise Time: | 17ns |
Fall Time: | 16ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 3.5V |
Technology: | SiC |
Input Capacitance: | 650pF |
Mounting Method: | Surface Mount |
1000
279.2758
279275.8