SI1427EDH-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI1427EDH-T1-GE3


：	SI1427EDH-T1-GE3
：	Mosfets
：	Vishay
：	MOSFET P-CH 20V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	64mΩ
Rated Power Dissipation:	1.56\|W
Qg Gate Charge:	14nC
Package Style:	SOT-363 (SC-70-6, SC-88)
Mounting Method:	Surface Mount

PDF(1)

3000

2.5355

7606.5

6000

2.0754

12452.4

9000

2.0582

18523.8

15000

2.0238

30357

IXYS

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1400V,20A Thyristor, TO-247AD (3)

Hongfa

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Vishay

SI1427EDH-T1-GE3

MOSFET P-CH 20V 2A SOT-363

STMicroelectronics

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Microchip

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Cinch

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Maxim Integrated

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API Delevan Inc.

1025-76K

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Laird-Signal Integrity Products

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Pulse Electronics Power

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API Delevan Inc.

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WIMA

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Vishay

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Susumu

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Vishay

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3M 5557

LABEL, WATER DETECT, 0.23TADHESIVE TAPE

Molex

1301380027

AC Power Plugs & Receptacles DUP CVR PLATE FOR C.E.P.

Mini-Circuits

TCML1-19X+

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Texas Instruments

LMP7717MFX/NOPB

Precision Amplifiers Single Channel, 88 MHz, Precision, Low Noise, 1.8V CMOS Input, Decompensated Amplifier 5-SOT-23 -40 to 125

SAFT

LS26500

CYLINDRICAL CELL BATTERY

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