SI1965DH-T1-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI1965DH-T1-E3


：	SI1965DH-T1-E3
：	Mosfets
：	Vishay
：	Si1965DH Series
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual P-Ch
Drain-to-Source Voltage [Vdss]:	12V
Drain-Source On Resistance-Max:	390mΩ
Rated Power Dissipation:	1.25\|W
Qg Gate Charge:	4.2nC
Package Style:	SOT-363 (SC-70-6, SC-88)
Mounting Method:	Surface Mount

PDF(1)

3000

2.2173

6651.9

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2.0998

12598.8

12000

1.9995

23994

15000

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28486.5

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