SI2308BDS-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI2308BDS-T1-GE3


：	SI2308BDS-T1-GE3
：	Mosfets
：	Vishay
：	SI2308BDS Serie
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	60V
Drain-Source On Resistance-Max:	0.156Ω
Rated Power Dissipation:	1.66\|W
Qg Gate Charge:	2.3nC
Package Style:	SOT-23 (SC-59,TO-236)
Mounting Method:	Surface Mount

PDF(1)

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