SI2316BDS-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI2316BDS-T1-GE3


：	SI2316BDS-T1-GE3
：	Mosfets
：	Vishay
：	Si2316BDS Serie
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	30V
Drain-Source On Resistance-Max:	50mΩ
Rated Power Dissipation:	1.66\|W
Qg Gate Charge:	9.6nC
Package Style:	SOT-23 (SC-59,TO-236)
Mounting Method:	Surface Mount

PDF(1)

3000

4.0993

12297.9

6000

3.8813

23287.8

9000

3.7395

33655.5

12000

3.5217

42260.4

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