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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SI2319CDS-T1-GE3
SI2319CDS-T1-GE3
:
SI2319CDS-T1-GE3
:
Mosfets
:
Vishay
:
P-Channel 40 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
P-Ch
Drain-to-Source Voltage [Vdss]:
40V
Drain-Source On Resistance-Max:
0.077Ω
Rated Power Dissipation:
2.5|W
Qg Gate Charge:
21nC
Package Style:
SOT-23 (SC-59,TO-236)
Mounting Method:
Surface Mount
PDF(1)
3000
7.1952
21585.6
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