TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 4.9mΩ |
Rated Power Dissipation: | 2.5|W |
Qg Gate Charge: | 36nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 16.8A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 25ns |
Rise Time: | 9ns |
Fall Time: | 9ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2.4V |
Height - Max: | 1.75mm |
Length: | 5mm |
Input Capacitance: | 2071pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
11.0765
27691.25
5000
8.918
44590
7500
8.842
66315