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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SI4840BDY-T1-E3
SI4840BDY-T1-E3
:
SI4840BDY-T1-E3
:
Mosfets
:
Vishay
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
40V
Drain-Source On Resistance-Max:
9mΩ
Rated Power Dissipation:
6|W
Qg Gate Charge:
50nC
Package Style:
SOIC-8
Mounting Method:
Surface Mount
PDF(1)
2500
21.4235
53558.75
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