SI4842BDY-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI4842BDY-T1-GE3


：	SI4842BDY-T1-GE3
：	Mosfets
：	Vishay
：	N-CHANNEL 30-V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	30V
Drain-Source On Resistance-Max:	4.2mΩ
Rated Power Dissipation:	6.25\|W
Qg Gate Charge:	100nC
Package Style:	SOIC-8
Mounting Method:	Surface Mount

PDF(1)

2500

13.3011

33252.75

5000

11.2844

56422

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SI4842BDY-T1-GE3

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