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| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 16mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 41nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 8A |
| Turn-on Delay Time: | 7ns |
| Turn-off Delay Time: | 31ns |
| Rise Time: | 27ns |
| Fall Time: | 8ns |
| Operating Temp Range: | -50°C to +150°C |
| Gate Source Threshold: | 1.8V |
| Input Capacitance: | 2070pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
12.1558
30389.5
