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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SI5504BDC-T1-E3
SI5504BDC-T1-E3
:
SI5504BDC-T1-E3
:
Mosfets
:
Vishay
:
Dual N & P
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
Dual N/P-Ch
Drain-to-Source Voltage [Vdss]:
30V/-30V
Drain-Source On Resistance-Max:
0.065Ω/0.14Ω
Rated Power Dissipation:
2|W
Qg Gate Charge:
4.5nC/4.5nC
Mounting Method:
Surface Mount
PDF(1)
3000
10.2038
30611.4
WAGO
264-120
2-conductor Ex e II miniature through terminal block
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SI5504BDC-T1-E3
Dual N & P Channel 30 V 0.065/0.014 Ohms SMT Power Mosfet - 1206-8 ChipFET
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RESISTORS, SHUNT, Current Rating:25A, Accuracy %:1%, Opera
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