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| TYPE | DESCRIPTION |
| Fet Type: | Dual N/P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 0.05Ω/0.156Ω |
| Rated Power Dissipation: | 2.1*1.3W |
| Qg Gate Charge: | 11.3nC/11nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | 3.1A/4A |
| Turn-on Delay Time: | 7ns/10ns |
| Turn-off Delay Time: | 30ns/25ns |
| Rise Time: | 18ns/48ns |
| Fall Time: | 20ns/12ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 0.8V |
| Technology: | Si |
| Height - Max: | 1.1mm |
| Length: | 3.1mm |
| Input Capacitance: | 632pF/455pF |
3000
5.3956
16186.8
6000
5.1019
30611.4
9000
4.8181
43362.9
12000
4.6002
55202.4
