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晶体管
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金属氧化物半导体场效应晶体管
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SI7456DDP-T1-GE3
SI7456DDP-T1-GE3
:
SI7456DDP-T1-GE3
:
Mosfets
:
Vishay
:
MOSFET N-CH 100
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
23mΩ
Rated Power Dissipation:
35.7|W
Qg Gate Charge:
29.5nC
Package Style:
POWERPAK-SO-8
Mounting Method:
Surface Mount
PDF(1)
3000
20.4174
61252.2
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