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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SI7998DP-T1-GE3
SI7998DP-T1-GE3
:
SI7998DP-T1-GE3
:
Mosfets
:
Vishay
:
Dual N-Channel
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
Dual N-Ch
Drain-to-Source Voltage [Vdss]:
30V
Drain-Source On Resistance-Max:
0.0093Ω
Rated Power Dissipation:
40|W
Qg Gate Charge:
26nC
Package Style:
POWERPAK-SO-8
Mounting Method:
Surface Mount
PDF(1)
3000
11.8604
35581.2
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SI7998DP-T1-GE3
Dual N-Channel 30 V 0.0093 Ohm 40 W Surface Mount Power Mosfet - PowerPAK-SO-8
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