SIA429DJT-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIA429DJT-T1-GE3


：	SIA429DJT-T1-GE3
：	Mosfets
：	Vishay
：	MOSFET P-Channe
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	20.5mΩ
Rated Power Dissipation:	3.5\|W
Qg Gate Charge:	62nC
Package Style:	POWERPAK-SC-70-6L
Mounting Method:	Surface Mount

PDF(1)

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