SIA519EDJ-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIA519EDJ-T1-GE3


：	SIA519EDJ-T1-GE3
：	Mosfets
：	Vishay
：	Dual N / P-Chan
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N/P-Ch
Drain-to-Source Voltage [Vdss]:	20V/-20V
Drain-Source On Resistance-Max:	0.4Ω/0.9Ω
Rated Power Dissipation:	7.8\|W
Qg Gate Charge:	7.7nC/10.5nC
Package Style:	POWERPAK-SC-70-6L
Mounting Method:	Surface Mount

PDF(1)

3000

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17889.6

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5.6794

34076.4

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5.3956

48560.4

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61222.8

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