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SIHA6N80AE-GE3

  • SIHA6N80AE-GE3
  • SIHA6N80AE-GE3
SIHA6N80AE-GE3
Mosfets
Vishay
E Series 800 V
-
Tube
-
TYPEDESCRIPTION
Series:E
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:800V
Drain-Source On Resistance-Max:0.950Ω
Rated Power Dissipation:30W
Qg Gate Charge:15nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:15A
Turn-on Delay Time:12ns
Turn-off Delay Time:16ns
Rise Time:10ns
Fall Time:20ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Input Capacitance:422pF
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
PDF(1)

1

13.0813

13.0813

50

11.7185

585.925

200

11.2829

2256.58

750

10.8572

8142.9

2500

10.4975

26243.75

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