SIHB22N60E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHB22N60E-GE3


：	SIHB22N60E-GE3
：	Mosfets
：	Vishay
：	E-Series N-Chan
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	180mΩ
Rated Power Dissipation:	227\|W
Qg Gate Charge:	57nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

69.8753

3493.765

150

59.5197

8927.955

250

58.5166

14629.15

500

57.2196

28609.8

1000

55.9226

55922.6

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SIHB22N60E-GE3

E-Series N-Channel 600 V 227 W 0.18 Ω 86 nC Surface Mount Power Mosfet - D2PAK

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EEE FT Series 10 V 220 uF Ø6.3 x 6.1 mm SMT Aluminum Electrolytic Capacitor

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Susumu

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Eaton - Electronics Division

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FIXED IND 220UH 1.253A 398 MOHM

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Advantech

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Crystal 12MHz Â±30ppm (Tol) Â±0ppm (Stability) 18pF FUND 50

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