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SIHB24N65EFT1-GE3

  • SIHB24N65EFT1-GE3
  • SIHB24N65EFT1-GE3
SIHB24N65EFT1-GE3
Mosfets
Vishay
E Series 650 V
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:650V
Drain-Source On Resistance-Max:156mΩ
Rated Power Dissipation:250W
Qg Gate Charge:36nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:24A
Turn-on Delay Time:48ns
Turn-off Delay Time:120ns
Rise Time:68ns
Fall Time:92ns
Operating Temp Range:-55°C to +150°C
Package Style: TO-263-3 (D2PAK)
Mounting Method:Surface Mount
PDF(1)

800

81.3649

65091.92

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