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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SIHB33N60E-GE3
SIHB33N60E-GE3
:
SIHB33N60E-GE3
:
Mosfets
:
Vishay
:
MOSFET 600V 99M
:
-
:
Bulk
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
600V
Drain-Source On Resistance-Max:
99mΩ
Rated Power Dissipation:
278|W
Qg Gate Charge:
100nC
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount
PDF(1)
1000
83.6609
83660.9
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