SIHF12N65E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHF12N65E-GE3


：	SIHF12N65E-GE3
：	Mosfets
：	Vishay
：	E Series N Chan
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	380mΩ
Rated Power Dissipation:	33\|W
Qg Gate Charge:	70nC
Package Style:	TO-220FP (TO-220FPAB)
Mounting Method:	Flange Mount

PDF(1)

24.1564

1207.82

2000

19.5562

39112.4

3000

19.2623

57786.9

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