SIHG22N60E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHG22N60E-GE3


：	SIHG22N60E-GE3
：	Mosfets
：	Vishay
：	E-Series N-Chan
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	180mΩ
Rated Power Dissipation:	227\|W
Qg Gate Charge:	57nC
Package Style:	TO-247AC
Mounting Method:	Through Hole

PDF(1)

44.5638

1114.095

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36.3766

36376.6

1500

35.9408

53911.2

2000

35.6571

71314.2

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