SIHG22N65E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHG22N65E-GE3


：	SIHG22N65E-GE3
：	Mosfets
：	Vishay
：	E Series N Chan
：	-
：	Tube
：	0
：	-
：

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	700V
Drain-Source On Resistance-Max:	0.18Ω
Rated Power Dissipation:	227\|W
Qg Gate Charge:	110nC
Package Style:	TO-247AC
Mounting Method:	Flange Mount

: 0

500

54.9195

27459.75

1000

44.5638

44563.8

1500

43.9964

65994.6

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