SIHG28N60EF-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHG28N60EF-GE3


：	SIHG28N60EF-GE3
：	Mosfets
：	Vishay
：	EF-Series N-Cha
：	-
：	Box
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	123mΩ
Rated Power Dissipation:	250\|W
Qg Gate Charge:	80nC
Package Style:	TO-247AC
Mounting Method:	Through Hole

PDF(1)

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