SIHG32N50D-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHG32N50D-E3


：	SIHG32N50D-E3
：	Mosfets
：	Vishay
：	N Channel 500 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	500V
Drain-Source On Resistance-Max:	150mΩ
Rated Power Dissipation:	390\|W
Qg Gate Charge:	64nC
Package Style:	TO-247AC
Mounting Method:	Through Hole

PDF(1)

55.2032

1380.08

100

47.5834

4758.34

250

46.1446

11536.15

625

44.8577

28036.0625

1000

44.1382

44138.2

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