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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SIHH26N60E-T1-GE3
SIHH26N60E-T1-GE3
:
SIHH26N60E-T1-GE3
:
Mosfets
:
Vishay
:
N-Channel 600 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
600V
Drain-Source On Resistance-Max:
135mΩ
Rated Power Dissipation:
202|W
Qg Gate Charge:
77nC
Mounting Method:
Surface Mount
PDF(1)
3000
44.8577
134573.1
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