SIHP12N60E-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHP12N60E-E3


：	SIHP12N60E-E3
：	Mosfets
：	Vishay
：	E-Series N-Chan
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	0.38Ω
Rated Power Dissipation:	147\|W
Qg Gate Charge:	58nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Flange Mount

PDF(1)

25.3015

1265.075

200

21.7044

4340.88

500

21.1369

10568.45

1250

20.5594

25699.25

2000

20.2755

40551

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