SIHP12N60E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHP12N60E-GE3


：	SIHP12N60E-GE3
：	Mosfets
：	Vishay
：	E-Series N-Chan
：	-
：	Bulk
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	380mΩ
Rated Power Dissipation:	147\|W
Qg Gate Charge:	29nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

24.2151

21.4843

859.372

125

20.7761

2597.0125

400

20.058

8023.2

1250

19.3399

24174.875

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