SIHP12N65E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHP12N65E-GE3


：	SIHP12N65E-GE3
：	Mosfets
：	Vishay
：	E Series N Chan
：	-
：	Bulk
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	380mΩ
Rated Power Dissipation:	156\|W
Qg Gate Charge:	35nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

1000

22.2024

22202.4

2000

18.0552

36110.4

3000

17.9036

53710.8

4000

17.7619

71047.6

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