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晶体管
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金属氧化物半导体场效应晶体管
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SIR804DP-T1-GE3
SIR804DP-T1-GE3
:
SIR804DP-T1-GE3
:
Mosfets
:
Vishay
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
0.0072Ω
Rated Power Dissipation:
104|W
Qg Gate Charge:
76nC
Package Style:
POWERPAK-SO-8
Mounting Method:
Surface Mount
PDF(1)
3000
21.4206
64261.8
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