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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SIR862DP-T1-GE3
SIR862DP-T1-GE3
:
SIR862DP-T1-GE3
:
Mosfets
:
Vishay
:
N Channel 25 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
25V
Drain-Source On Resistance-Max:
0.0028Ω
Rated Power Dissipation:
69|W
Qg Gate Charge:
28.4nC
Package Style:
POWERPAK-SO-8
Mounting Method:
Surface Mount
PDF(1)
3000
15.5234
46570.2
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