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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SIRA00DP-T1-GE3
SIRA00DP-T1-GE3
:
SIRA00DP-T1-GE3
:
Mosfets
:
Vishay
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
30V
Drain-Source On Resistance-Max:
1mΩ
Rated Power Dissipation:
6.25|W
Qg Gate Charge:
147nC
Package Style:
POWERPAK-SO-8
Mounting Method:
Surface Mount
PDF(1)
3000
18.1173
54351.9
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