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SIS890DN-T1-GE3

  • SIS890DN-T1-GE3
  • SIS890DN-T1-GE3
  • SIS890DN-T1-GE3
  • SIS890DN-T1-GE3
SIS890DN-T1-GE3
Mosfets
Vishay
N-Channel 100 V
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:23.5mΩ
Rated Power Dissipation:3.7W
Qg Gate Charge:19.1nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:8.8A
Turn-on Delay Time:9ns
Turn-off Delay Time:16ns
Rise Time:10ns
Fall Time:8ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Input Capacitance:802pF
Package Style: POWERPAK-1212-8
Mounting Method:Surface Mount
PDF(1)

3000

9.9199

29759.7

6000

7.9036

47421.6

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