取消
| TYPE | DESCRIPTION |
| Fet Type: | Dual P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 0.085Ω |
| Rated Power Dissipation: | 27|W |
| Qg Gate Charge: | 26.5nC |
| Drain Current: | 25A |
| Turn-on Delay Time: | 11ns |
| Turn-off Delay Time: | 36ns |
| Rise Time: | 13ns |
| Fall Time: | 8ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2V |
| Technology: | PowerTrench |
| Height - Max: | 1.04mm |
| Length: | 6.15mm |
| Input Capacitance: | 912pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
3000
13.8008
41402.4
