TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 5.6mΩ |
Rated Power Dissipation: | 125W |
Qg Gate Charge: | 30nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 100A |
Turn-on Delay Time: | 21.6ns |
Turn-off Delay Time: | 28.6ns |
Rise Time: | 55.5ns |
Fall Time: | 15ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 4.6mm |
Length: | 1.4mm |
Input Capacitance: | 1980pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
1000
29.3242
29324.2
2000
23.437
46874