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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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STB140NF55T4
STB140NF55T4
:
STB140NF55T4
:
Mosfets
:
STMicroelectronics
:
N-Channel 55 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
55V
Drain-Source On Resistance-Max:
0.0065Ω
Rated Power Dissipation:
300|W
Qg Gate Charge:
142nC
Mounting Method:
Surface Mount
PDF(1)
1000
36.6603
36660.3
2000
29.3242
58648.4
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