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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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STD105N10F7AG
STD105N10F7AG
:
STD105N10F7AG
:
Mosfets
:
STMicroelectronics
:
100 V 6.8 mOhm
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
8mΩ
Rated Power Dissipation:
120|W
Qg Gate Charge:
61nC
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount
PDF(1)
2500
19.5562
48890.5
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