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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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STD10NM60ND
STD10NM60ND
:
STD10NM60ND
:
Mosfets
:
STMicroelectronics
:
N-Channel 600 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
650V
Drain-Source On Resistance-Max:
0.6Ω
Rated Power Dissipation:
70|W
Qg Gate Charge:
20nC
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount
PDF(1)
2500
34.9377
87344.25
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