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STD11N60DM2

  • STD11N60DM2
  • STD11N60DM2
STD11N60DM2
Mosfets
STMicroelectronics
N-Channel 600 V
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:420mΩ
Rated Power Dissipation:110W
Qg Gate Charge:16.5nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:10A
Turn-on Delay Time:11.7ns
Turn-off Delay Time:31ns
Rise Time:6.3ns
Fall Time:9.5ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Technology:MDmesh
Input Capacitance:614pF
Package Style: TO-252-3 (DPAK)
Mounting Method:Surface Mount
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